Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
SPICE parameters for the BFG540W crystal
SEQUENCE No. PARAMETER VALUE
UNIT
SEQUENCE No. PARAMETER VALUE
UNIT
mV
36 (1)
37 (1)
38
VJS
MJS
FC
750.0
0.000
0.814
1
IS
1.045
184.3
0.981
41.69
10.00
232.4
2.028
43.99
0.992
2.097
166.2
129.8
1.064
5.000
1.000
5.000
353.5
1.340
0.000
1.110
3.000
1.978
600.0
0.332
7.457
11.40
3.158
156.9
0.000
793.7
185.5
0.084
0.150
1.598
0.000
fA
−
2
BF
−
−
3
NF
−
4
VAF
IKF
ISE
NE
V
Note
5
A
1. These parameters have not been extracted, the
default values are shown.
6
fA
−
7
8
BR
−
C
handbook, halfpage
cb
9
NR
−
10
11
12
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35 (1)
VAR
IKR
ISC
NC
V
L
mA
aA
−
B
L1
L2
B
B'
C'
C
E'
C
C
be
ce
RB
Ω
L
E
IRB
RBM
RE
µA
Ω
MBC964
L3
mΩ
Ω
RC
E
XTB
EG
−
eV
−
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
XTI
CJE
VJE
MJE
TF
pF
mV
−
Fig.23 Package equivalent circuit
SOT343N; SOT343R.
ps
−
List of components (see Fig.23).
XTF
VTF
ITF
DESIGNATION
VALUE
UNIT
V
Cbe
Ccb
Cce
L1
70
fF
mA
deg
fF
mV
−
50
fF
PTF
CJC
VJC
MJC
XCJC
TR
115
fF
0.34
0.10
0.25
0.40
0.40
nH
nH
nH
nH
nH
L2
L3
−
LB
ns
F
LE
CJS
1997 Dec 04
12
NXP [ NXP ]
