Philips Semiconductors
Product specification
PNP medium power transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
BCX51; BCX52; BCX53
MIN.
−
−
−
40
63
25
63
100
TYP. MAX. UNIT
−
−
−
−
−
−
−
−
−
−
50
−100
−10
−100
−
250
−
160
250
−500
−1
−
mV
V
MHz
nA
µA
nA
I
E
= 0; V
CB
=
−30
V; T
j
= 125
°C
I
C
= 0; V
EB
=
−5
V
V
CE
=
−2
V; see Fig.2
I
C
=
−5
mA
I
C
=
−150
mA
I
C
=
−500
mA
DC current gain
BCX51-10; BCX52-10; BCX53-10
BCX51-16; BCX52-16; BCX53-16
V
CEsat
V
BE
f
T
collector-emitter saturation voltage
base-emitter voltage
transition frequency
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; V
CE
=
−2
V
I
C
=
−150
mA; V
CE
=
−2
V; see Fig.2
−
−
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz
−
handbook, full pagewidth
160
MBH730
hFE
120
VCE =
−2
V
80
40
0
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
Fig.2 DC current gain; typical values.
1999 Apr 19
4
PHILIPS [ NXP SEMICONDUCTORS ]
