Philips Semiconductors
Product specification
PNP medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BCX51
BCX52
BCX53
V
CEO
collector-emitter voltage
BCX51
BCX52
BCX53
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BCX51; BCX52; BCX53
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−45
−60
−100
−45
−60
−80
−5
−1
−1.5
−200
1.3
+150
150
+150
V
V
V
V
V
V
V
A
A
UNIT
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
94
14
UNIT
K/W
K/W
thermal resistance from junction to soldering point note 1
1999 Apr 19
3
PHILIPS [ NXP SEMICONDUCTORS ]
