Philips Semiconductors
Product specification
NPN general purpose transistor
FEATURES
•
High current (500 mA)
•
Low voltage (45 V).
APPLICATIONS
•
General purpose amplification
•
Saturated switching and driver applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BCX17.
MARKING
1
2
MAM255
BCX19
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
TYPE NUMBER
BCX19
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
U8∗
Top view
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base; I
C
= 10 mA
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
50
45
5
500
1
200
250
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
1999 Apr 12
2
PHILIPS [ NXP SEMICONDUCTORS ]
