Philips Semiconductors
Product specification
PNP medium power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
91
10
BCP69
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−25
V
I
E
= 0; V
CB
=
−25
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−5
mA; V
CE
=
−10
V
I
C
=
−500
mA; V
CE
=
−1
V; see Fig.2
I
C
=
−1
A; V
CE
=
−1
V; see Fig.2
DC current gain
BCP69-16
BCP69-25
V
CEsat
V
BE
C
c
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage I
C
=
−1
A; I
B
=
−100
mA
base-emitter voltage
collector capacitance
transition frequency
DC current gain ratio of the
complementary pairs
I
C
=
−5
mA; V
CE
=
−10
V
I
C
=
−1
A; V
CE
=
−1
V
I
E
= i
e
= 0; V
CB
=
−5
V; f = 1 MHz
I
C
= 0.5 A;
V
CE
= 1 V
I
C
=
−500
mA; V
CE
=
−1
V; see Fig.2
100
160
−
−
−
−
−
−
−
−
−620
−
48
−
−
250
375
−500
−
−1
−
−
1.6
mV
mV
V
pF
MHz
MIN.
−
−
−
50
85
60
TYP.
−
−
−
−
−
−
MAX. UNIT
−100
−10
−100
−
375
−
nA
µA
nA
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 40
1999 Apr 08
3
PHILIPS [ NXP SEMICONDUCTORS ]
