Philips Semiconductors
Product specification
NPN medium power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BCP54; BCP55; BCP56
CONDITIONS
note 1
VALUE
94
13
UNIT
K/W
K/W
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
I
C
= 500 mA; V
CE
= 2 V
h
FE
DC current gain
BCP55-10; 56-10
BCP54-16; 55-16; 56-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 0.5 A; I
B
= 50 mA
I
C
= 0.5 A; V
CE
= 2 V
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
63
100
−
−
−
−
MIN.
−
−
−
25
63
25
TYP.
−
−
−
−
−
−
−
−
−
−
−
130
−
160
250
500
1
−
1.6
mV
V
MHz
MAX.
100
10
100
−
250
−
UNIT
nA
µA
nA
1999 Apr 08
3
PHILIPS [ NXP SEMICONDUCTORS ]
