BC635; BCP54; BCX54
NXP Semiconductors
45 V, 1 A NPN medium power transistors
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1.6
300
I
(mA) = 50 45 40 35 30
B
I
C
h
FE
(A)
1.2
(1)
25
20
200
15
10
0.8
0.4
0
(2)
5
100
(3)
0
10
−1
2
3
4
0
0.4
0.8
1.2
1.6
V
2.0
(V)
1
10
10
10
10
(mA)
I
CE
C
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. DC current gain as a function of collector
current; typical values
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
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1.2
1
V
BE
(V)
V
CEsat
(V)
(1)
(2)
0.8
−1
10
0.4
(3)
(1)
(2)
(3)
2
−2
0
10
10
−1
2
3
4
−1
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 12. Base-emitter voltage as a function of collector
current; typical values
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
BC635_BCP54_BCX54_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 4 June 2007
10 of 15
NXP [ NXP ]
