BC640; BCP53; BCX53
NXP Semiconductors
80 V, 1 A PNP medium power transistors
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300
−1.6
I
(mA) = −45 −40.5 −36
B
I
C
(1)
(A)
h
FE
−31.5
−27
−22.5
−1.2
200
−18
−13.5
(2)
(3)
−0.8
−0.4
0
−9
100
−4.5
0
−10
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
0
−0.4
−0.8
−1.2
−1.6
−2.0
(V)
I
V
C
CE
VCE = −2 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. DC current gain as a function of collector
current; typical values
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
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3
−1200
−10
V
BE
(mV)
−1000
V
CEsat
(mV)
(1)
(2)
−800
−600
−400
−200
2
−10
(1)
(3)
(2)
(3)
−10
−10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
I (mA)
C
I
C
VCE = −2 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 12. Base-emitter voltage as a function of collector
current; typical values
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
BC640_BCP53_BCX53_8
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 08 — 22 February 2008
10 of 15
NXP [ NXP ]
