Philips Semiconductors
Product specification
NPN general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
CONDITIONS
V
CB
= 30 V; I
E
= 0
V
CB
= 30 V; I
E
= 0;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC846A; BC847A
BC846B; BC847B; BC848B
BC847C
DC current gain
BC846
BC847
BC846A; BC847A
BC846B; BC847B; BC848B
BC847C
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA;
note 1
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA;
note 1
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CB
= 10 V; I
E
= I
e
= 0;
f = 1 MHz
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
I
C
= 2 mA; V
CE
= 5 V
V
EB
= 5 V; I
C
= 0
I
C
= 10
µA;
V
CE
= 5 V
BC846; BC847; BC848
MIN.
−
−
−
−
−
−
110
110
110
200
420
−
−
−
−
580
−
−
100
−
TYP.
−
−
−
90
150
270
−
−
180
290
520
90
200
700
900
660
−
2.5
−
2
MAX.
15
5
100
−
−
−
450
800
220
450
800
250
600
−
−
700
770
−
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
MHz
dB
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2004 Feb 06
4
PHILIPS [ NXP SEMICONDUCTORS ]
