Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SC70; SOT323 plastic package.
PNP complements: BC856W and BC857W.
MARKING
handbook, halfpage
BC846W; BC847W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
TYPE
NUMBER
BC846W
BC846AW
BC846BW
BC847W
Note
MARKING
CODE
(1)
1D∗
1A∗
1B∗
1H∗
TYPE
NUMBER
BC847AW
BC847BW
BC847CW
MARKING
CODE
(1)
1E∗
1F∗
1G∗
1
Top view
2
MAM062
2
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
Simplified outline (SC70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BC846W
BC847W
V
CEO
collector-emitter voltage
BC846W
BC847W
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23
2
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
65
45
5
100
200
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
80
50
V
V
MIN.
MAX.
UNIT
PHILIPS [ NXP SEMICONDUCTORS ]
