NXP Semiconductors
Product data sheet
Low-leakage double diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 75 V
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
0.003
3
2
0.8
5
80
−
3
−
−
−
−
900
PARAMETER
CONDITIONS
TYP.
BAV199
MAX.
UNIT
mV
mV
mV
mV
nA
nA
pF
µs
1 000
1100
1 250
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
2001 Oct 12
3
PHILIPS [ NXP SEMICONDUCTORS ]
