NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
10
2
handbook, halfpage
IR
(nA)
MLB754
handbook, halfpage
2
MBG526
10
(1)
Cd
(pF)
1
1
10
1
10
2
(2)
10
3
0
0
50
100
150
T j ( C)
o
200
0
5
10
15
VR (V)
20
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature; per diode.
Fig.6
Diode capacitance as a function of reverse
voltage; per diode; typical values.
handbook, full pagewidth
tr
D.U.T.
10%
SAMPLING
OSCILLOSCOPE
R = 50
Ω
i
VR
90%
tp
t
RS = 50
Ω
V = VR I F x R S
IF
IF
t rr
t
(1)
MGA881
input signal
output signal
Fig.7 Reverse recovery time test circuit and waveforms.
2001 Oct 12
5