Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
<
10 ms
T
amb
≤
25
°C
PARAMETER
CONDITIONS
BAT54W series
MIN.
MAX.
UNIT
−
−
−
−
−
−65
−
−65
30
200
300
600
200
+150
125
+125
V
mA
mA
mA
mW
°C
°C
°C
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.6
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
t
rr
reverse current
reverse recovery time
V
R
= 25 V; note 1; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA: see Fig.9
f = 1 MHz; V
R
= 1 V; see Fig.8
240
320
400
500
800
2
5
mV
mV
mV
mV
mV
µA
ns
PARAMETER
CONDITIONS
MAX.
UNIT
C
d
Note
diode capacitance
10
pF
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
625
UNIT
K/W
1996 Mar 19
3
PHILIPS [ NXP SEMICONDUCTORS ]
