NXP Semiconductors
BAT54 series
Schottky barrier diodes
10
C
d
(pF)
8
006aac891
6
4
2
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1 mA
Fig 4.
Reverse recovery time test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
BAT54_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 5 October 2012
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