Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
<
10 ms
−
−
−
−
−65
−
−65
PARAMETER
CONDITIONS
BAS40 series
MIN.
MAX.
UNIT
40
120
120
200
+150
150
+150
V
mA
mA
mA
°C
°C
°C
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
500
UNIT
K/W
reverse current
diode capacitance
V
R
= 30 V; note 1; see Fig.4
V
R
= 40 V; note 1; see Fig.4
f = 1 MHz; V
R
= 0 ; see Fig.6
380
500
1
1
10
5
mV
mV
V
µA
µA
pF
PARAMETER
CONDITIONS
MAX.
UNIT
1999 Apr 28
3
PHILIPS [ NXP SEMICONDUCTORS ]
