Philips Semiconductors
Product specification
High-speed switching diode
GRAPHICAL DATA
BAS216
MSA570
500
handbook, halfpage
300
IF
MBG382
P tot
(mW)
(mA)
(1)
(2)
(3)
200
250
100
0
0
100
Tamb ( C)
o
0
200
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible total power dissipation
as a function of ambient temperature.
Fig.3
Forward current as a function of
forward voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 Apr 22
4
PHILIPS [ NXP SEMICONDUCTORS ]
