Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
MBG381
MBG447
2
10
1.0
handbook, halfpage
handbook, halfpage
C
I
d
R
(pF)
0.8
(µA)
10
(1)
(2)
1
1
0.6
0.4
10
10
2
0.2
0
o
0
100
200
2
4
6
8
T ( C)
j
V
(V)
R
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of
junction temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
MBG445
300
handbook, halfpage
V
R
(V)
(1)
200
(2)
(3)
100
0
0
o
100
200
T
( C)
amb
(1) BAS21.
(2) BAS20.
(3) BAS19.
Fig.7 Maximum permissible continuous reverse
voltage as a function of the
ambient temperature.
1999 May 26
6
NXP [ NXP ]
