NXP Semiconductors
Product data sheet
General purpose diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
BAS19
BAS20
BAS21
C
d
t
rr
diode capacitance
reverse recovery time
see Fig.5
V
R
= 100 V
V
R
= 100 V; T
j
= 150
°C
V
R
= 150 V
V
R
= 150 V; T
j
= 150
°C
V
R
= 200 V
V
R
= 200 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0; see Fig.6
CONDITIONS
BAS19; BAS20; BAS21
MAX.
1
1.25
100
100
100
100
100
100
5
50
V
V
UNIT
nA
µA
nA
µA
nA
µA
pF
ns
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured at
I
R
= 3 mA; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
2003 Mar 20
4
PHILIPS [ NXP SEMICONDUCTORS ]
