Philips Semiconductors
Product specification
Hex inverter
DC CHARACTERISTICS FOR 74HCU
Voltages are referenced to GND (ground = 0 V)
T
amb
(°C)
74HCU
SYMBOL
PARAMETER
+25
min. typ.
V
IH
HIGH level input voltage 1.7
3.6
4.8
LOW level input voltage
1.4
2.6
3.4
0.6
1.9
2.6
1.8
4.0
5.5
2.0
4.5
6.0
0.3
0.9
1.2
1.8
4.0
5.5
3.84
5.34
0.2
0.5
0.5
0.2
0.5
0.5
0.33
0.33
1.0
-40 to +85
−40
to
+125
UNIT V
CC
(V)
74HCU04
TEST CONDITIONS
V
I
OTHER
max. min. max. min. max.
1.7
3.6
4.8
0.3
0.9
1.2
1.8
4.0
5.5
3.7
5.2
0.2
0.5
0.5
0.4
0.4
1.0
1.7
3.6
4.8
0.3
0.9
1.2
V
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
V
IH
or
V
IL
−I
O
= 20
µA
−I
O
= 20
µA
−I
O
= 20
µA
V
IL
V
V
OH
HIGH level output
voltage
HIGH level output
voltage
LOW level output
voltage
LOW level output
voltage
input leakage current
V
V
OH
3.98 4.32
5.48 5.81
0
0
0
V
V
CC
−I
O
= 4.0 mA
or
−I
O
= 5.2 mA
GND
V
IH
or
V
IL
I
O
= 20
µA
I
O
= 20
µA
I
O
= 20
µA
V
OL
V
V
OL
0.15 0.26
0.16 0.26
0.1
V
V
CC
I
O
= 4.0 mA
or
I
O
= 5.2 mA
GND
V
CC
or
GND
V
CC
I
O
= 0
or
GND
±I
I
µA
I
CC
quiescent supply
current
2.0
20.0
40.0
µA
6.0
September 1993
4
PHILIPS [ NXP SEMICONDUCTORS ]
