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74HC573PW-Q100 参数 Datasheet PDF下载

74HC573PW-Q100图片预览
型号: 74HC573PW-Q100
PDF下载: 下载PDF文件 查看货源
内容描述: 八路D型透明锁存器;三态 [Octal D-type transparent latch; 3-state]
分类和应用: 总线驱动器总线收发器锁存器逻辑集成电路光电二极管
文件页数/大小: 19 页 / 253 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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74HC573-Q100; 74HCT573-Q100
Octal D-type transparent latch; 3-state
Rev. 2 — 16 August 2012
Product data sheet
1. General description
The 74HC573-Q100; 74HCT573-Q100 is a high-speed Si-gate CMOS device and is pin
compatible with Low-power Schottky TTL (LSTTL). It is specified in compliance with
JEDEC standard no. 7A.
The 74HC573-Q100; 74HCT573-Q100 has octal D-type transparent latches featuring
separate D-type inputs for each latch and 3-state true outputs for bus-oriented
applications. A latch enable (LE) input and an output enable (OE) input are common to all
latches.
When LE is HIGH, data at the Dn inputs enter the latches. In this condition, the latches are
transparent, i.e. a latch output changes state each time its corresponding D input
changes.
When LE is LOW the latches store the information that was present at the D-inputs a
set-up time preceding the HIGH-to-LOW transition of LE. When OE is LOW, the contents
of the 8 latches are available at the outputs. When OE is HIGH, the outputs go to the
high-impedance OFF-state. Operation of the OE input does not affect the state of the
latches.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Input levels:
For 74HC573: CMOS level
For 74HCT573: TTL level
Inputs and outputs on opposite sides of package allowing easy interface with
microprocessors
Useful as input or output port for microprocessors and microcomputers
3-state non-inverting outputs for bus-oriented applications
Common 3-state output enable input
Multiple package options
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)