74HC245; 74HCT245
Philips Semiconductors
Octal bus tranceiver; 3-state
Table 10: Dynamic characteristics type 74HCT245
GND = 0 V; test circuit see Figure 7.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
tPHL, tPLH
propagation delay An to Bn or Bn see Figure 5
to An
VCC = 4.5 V
-
-
-
12
10
16
22
-
ns
ns
ns
VCC = 5.0 V; CL = 15 pF
tPZH, tPZL
tPHZ, tPLZ
3-state output enable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
30
3-state output disable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
-
16
30
ns
tTHL, tTLH
CPD
output transition time
VCC = 4.5 V; see Figure 5
-
-
5
12
-
ns
[1]
power dissipation capacitance
per transceiver
VI = GND to VCC − 1.5 V
30
pF
Tamb = −40 °C to +85 °C
tPHL, tPLH
tPZH, tPZL
tPHZ, tPLZ
tTHL, tTLH
propagation delay An to Bn or Bn VCC = 4.5 V; see Figure 5
to An
-
-
-
-
-
-
-
-
28
38
38
15
ns
ns
ns
ns
3-state output enable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
3-state output disable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
output transition time
VCC = 4.5 V; see Figure 5
Tamb = −40 °C to +125 °C
tPHL, tPLH
tPZH, tPZL
tPHZ, tPLZ
tTHL, tTLH
propagation delay An to Bn or Bn VCC = 4.5 V; see Figure 5
to An
-
-
-
-
-
-
-
-
33
45
45
18
ns
ns
ns
ns
3-state output enable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
3-state output disable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
output transition time
VCC = 4.5 V; see Figure 5
[1] CPD is used to determine the dynamic power dissipation (PD in µW):
PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑ (CL × VCC2 × fo) = sum of outputs.
9397 750 14502
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 31 January 2005
12 of 22
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