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74HC14N 参数 Datasheet PDF下载

74HC14N图片预览
型号: 74HC14N
PDF下载: 下载PDF文件 查看货源
内容描述: 六角反相施密特触发器 [Hex inverting Schmitt trigger]
分类和应用: 触发器
文件页数/大小: 23 页 / 121 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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Philips Semiconductors
Product specification
Hex inverting Schmitt trigger
FEATURES
Applications:
– Wave and pulse shapers
– Astable multivibrators
– Monostable multivibrators.
Complies with JEDEC standard no. 7A
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
Specified from
−40
to +85
°C
and
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
= 6 ns
DESCRIPTION
74HC14; 74HCT14
The 74HC14 and 74HCT14 are high-speed Si-gate CMOS
devices and are pin compatible with low power Schottky
TTL (LSTTL). They are specified in compliance with
JEDEC standard no. 7A.
The 74HC14 and 74HCT14 provide six inverting buffers
with Schmitt-trigger action. They are capable of
transforming slowly changing input signals into sharply
defined, jitter-free output signals.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW):
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
2. For type 74HC14 the condition is V
I
= GND to V
CC
.
For type 74HCT14 the condition is V
I
= GND to V
CC
1.5 V.
PARAMETER
propagation delay nA to nY
input capacitance
power dissipation capacitance per gate notes 1 and 2
CONDITIONS
HC
C
L
= 15 pF; V
CC
= 5 V 12
3.5
7
17
3.5
8
HCT
ns
pF
pF
UNIT
2003 Oct 30
2