Philips Semiconductors
Product specification
Triple 3-input NAND gate
FEATURES
•
Output capability: standard
•
I
CC
category: SSI
GENERAL DESCRIPTION
74HC/HCT10
The 74HC/HCT10 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL).
They are specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT10 provide the 3-input NAND function.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
= 6 ns
TYPICAL
SYMBOL
t
PHL
/ t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW):
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
O
) where:
f
i
= input frequency in MHz
f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in V
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs
2. For HC the condition is V
I
= GND to V
CC
For HCT the condition is V
I
= GND to V
CC
−
1.5 V.
ORDERING INFORMATION
See
“74HC/HCT/HCU/HCMOS Logic Package Information”.
PARAMETER
propagation delay nA, nB, nC to nY
input capacitance
power dissipation capacitance per gate
notes 1 and 2
CONDITIONS
HC
C
L
= 15 pF; V
CC
= 5 V
9
3.5
12
11
3.5
14
HCT
ns
pF
pF
UNIT
December 1990
2
PHILIPS [ NXP SEMICONDUCTORS ]
