NXP Semiconductors
74HC04-Q100; 74HCT04-Q100
Hex inverter
Table 6.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
I
CC
I
CC
supply current
additional
supply current
Conditions
Min
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input pin;
V
I
= V
CC
2.1 V; I
O
= 0 A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
-
-
25
C
Typ
-
120
Max
2
432
40 C
to +85
C 40 C
to +125
C
Unit
Min
-
-
Max
20
540
Min
-
-
Max
40
590
A
A
C
I
input
capacitance
-
3.5
-
-
-
-
-
pF
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for load circuit see
Symbol Parameter
Conditions
Min
74HC04-Q100
t
pd
propagation delay nA to nY; see
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
t
t
transition time
see
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation
capacitance
per package; V
I
= GND to V
CC
25
C
Typ
Max
40 C
to +125
C
Unit
Max
(85
C)
Max
(125
C)
-
-
-
-
-
-
-
-
25
9
7
7
19
7
6
21
85
17
-
14
75
15
13
-
105
21
-
18
95
19
16
-
130
26
-
22
110
22
19
-
ns
ns
ns
ns
ns
ns
ns
pF
74HCT04-Q100
t
pd
propagation delay nA to nY; see
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
t
t
C
PD
transition time
power dissipation
capacitance
V
CC
= 4.5 V; see
per package;
V
I
= GND to V
CC
1.5 V
-
-
-
-
10
8
7
24
19
-
15
-
24
-
19
-
29
-
22
-
ns
ns
ns
pF
[1]
[2]
[3]
t
pd
is the same as t
PHL
and t
PLH
.
t
t
is the same as t
THL
and t
TLH
.
C
PD
is used to determine the dynamic power dissipation (P
D
in
W):
P
D
= C
PD
V
CC2
f
i
N +
(C
L
V
CC2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
74HC_HCT04_Q100
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 10 April 2013
6 of 16
PHILIPS [ NXP SEMICONDUCTORS ]
