74HC04-Q100; 74HCT04-Q100
NXP Semiconductors
Hex inverter
Table 6.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ
Max
Min
Max
Min
Max
ICC
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
-
-
2
-
20
-
40
A
ICC
additional
per input pin;
-
120
432
-
-
-
540
-
-
-
590
-
A
supply current VI = VCC 2.1 V; IO = 0 A;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
CI
input
-
3.5
pF
capacitance
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
25 C
40 C to +125 C Unit
Max Max
(85 C) (125 C)
Min
Typ
Max
74HC04-Q100
[1]
tpd
propagation delay nA to nY; see Figure 6
VCC = 2.0 V
-
-
-
-
25
9
85
17
-
105
21
-
130
26
-
ns
ns
ns
ns
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V
7
7
14
18
22
[2]
tt
transition time
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
-
-
-
-
19
7
75
15
13
-
95
19
16
-
110
22
19
-
ns
ns
ns
pF
6
[3]
[1]
CPD
power dissipation per package; VI = GND to VCC
capacitance
21
74HCT04-Q100
tpd
propagation delay nA to nY; see Figure 6
VCC = 4.5 V
-
-
-
-
10
8
19
-
24
-
29
-
ns
ns
ns
pF
VCC = 5.0 V; CL = 15 pF
VCC = 4.5 V; see Figure 6
[2]
[3]
tt
transition time
7
15
-
19
-
22
-
CPD
power dissipation per package;
capacitance VI = GND to VCC 1.5 V
24
[1] tpd is the same as tPHL and tPLH
.
[2] tt is the same as tTHL and tTLH
.
[3]
CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
74HC_HCT04_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 10 April 2013
6 of 16
NXP [ NXP ]
