Philips Semiconductors
Product specification
Quad 2-input NAND gate
74F00
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limit set forth in this table may impair the useful life of the device.
Unless otherwise noted these limits are over the operating free air temperature range.)
SYMBOL
V
CC
V
IN
I
IN
V
OUT
I
OUT
T
amb
T
stg
Supply voltage
Input voltage
Input current
Voltage applied to output in high output state
Current applied to output in low output state
Operating free air temperature range
Commercial range
Industrial range
Storage temperature range
PARAMETER
RATING
–0.5 to +7.0
–0.5 to +7.0
–30 to +5
–0.5 to V
CC
40
0 to +70
–40 to +85
–65 to +150
UNIT
V
V
mA
V
mA
°C
°C
°C
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
V
CC
V
IH
V
IL
I
Ik
I
OH
I
OL
T
amb
Supply voltage
High-level input voltage
Low-level input voltage
Input clamp current
High-level output current
Low-level output current
Operating free air temperature range
Commercial range
Industrial range
0
–40
4.5
2.0
0.8
–18
–1
20
+70
+85
LIMITS
NOM
5.0
MAX
5.5
V
V
V
mA
mA
mA
°C
°C
UNIT
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
V
OH
V
OL
V
IK
I
I
I
IH
I
IL
I
OS
I
CC
PARAMETER
High-level output voltage
TEST CONDITIONS
1
MIN
V
CC
= MIN, V
IL
= MAX
V
IH
= MIN, I
OH
= MAX
Low-level output voltage
V
CC
= MIN, V
IL
= MAX
V
IH
= MIN, I
Ol
= MAX
Input clamp voltage
Input current at maximum input
voltage
High-level input current
Low-level input current
Short-circuit output current
3
Supply current (total)
I
CCH
I
CCL
V
CC
= MIN, I
I
= I
IK
V
CC
= MAX, V
I
= 7.0V
V
CC
= MAX, V
I
= 2.7V
V
CC
= MAX, V
I
= 0.5V
V
CC
= MAX
V
CC
= MAX
V
CC
= MAX
V
IN
= GND
V
IN
= 4.5V
-60
1.9
6.8
±10%V
CC
±5%V
CC
±10%V
CC
±5%V
CC
2.5
2.7
3.4
0.30
0.30
-0.73
0.50
0.50
-1.2
100
20
-0.6
-150
2.8
10.2
LIMITS
TYP
2
MAX
V
V
V
V
V
µA
µA
mA
mA
mA
mA
UNIT
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
CC
= 5V, T
amb
= 25°C.
3. Not more than one output should be shorted at a time. For testing I
OS
, the use of high-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, I
OS
tests should be performed last.
October 4, 1990
3
PHILIPS [ NXP SEMICONDUCTORS ]
