Philips Semiconductors
Product specification
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; see Fig.2
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 150 mA; note 1
I
C
= 500 mA; V
CE
= 2 V; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 20 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA
20
40
80
100
40
−
−
−
−
−
−
250
−
−
−
−
−
−
−
−
−
300
−
400
750
950
1.2
6.5
30
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
200
2N4401
UNIT
K/W
MAX.
50
50
UNIT
nA
nA
mV
mV
mV
V
pF
pF
MHz
Switching times (between 10% and 90% levels);
see Fig.3
turn-on time
delay time
rise time
turn-off time
storage time
fall time
35
15
20
250
200
60
ns
ns
ns
ns
ns
ns
1999 Apr 23
3
PHILIPS [ NXP SEMICONDUCTORS ]
