Philips Semiconductors
Product specification
PNP switching transistors
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
High-speed switching
•
Driver applications for industrial service.
1
handbook, halfpage
2N2905; 2N2905A
PINNING
PIN
1
2
3
emitter
base
collector, connected to case
DESCRIPTION
DESCRIPTION
PNP switching transistor in a TO-39 metal package.
NPN complements: 2N2219 and 2N2219A.
3
2
2
3
MAM318
1
Fig.1
Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
PARAMETER
collector-base voltage
collector-emitter voltage
2N2905
2N2905A
I
C
P
tot
h
FE
f
T
t
off
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
T
amb
≤
25
°C
I
C
=
−150
mA; V
CE
=
−10
V
I
C
=
−50
mA; V
CE
=
−20
V; f = 100 MHz
I
Con
=
−150
mA; I
Bon
=
−15
mA; I
Boff
= 15 mA
open emitter
open base
−
−
−
−
100
200
−
−40
−60
−600
600
300
−
300
MHz
ns
V
V
mA
mW
CONDITIONS
−
MIN.
MAX.
−60
V
UNIT
1997 May 28
2
PHILIPS [ NXP SEMICONDUCTORS ]
