Philips Semiconductors
Product specification
NPN switching transistors
FEATURES
•
High current (max. 800 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
Linear amplification and switching.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
3
2N2222; 2N2222A
PINNING
PIN
1
2
3
emitter
base
collector, connected to case
DESCRIPTION
handbook, halfpage
1
3
2
MAM264
2
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
2N2222
2N2222A
V
CEO
collector-emitter voltage
2N2222
2N2222A
I
C
P
tot
h
FE
f
T
collector current (DC)
total power dissipation
DC current gain
transition frequency
2N2222
2N2222A
t
off
turn-off time
I
Con
= 150 mA; I
Bon
= 15 mA; I
Boff
=
−15
mA
T
amb
≤
25
°C
I
C
= 10 mA; V
CE
= 10 V
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
250
300
−
−
−
250
MHz
MHz
ns
open base
−
−
−
−
75
30
40
800
500
−
V
V
mA
mW
open emitter
−
−
60
75
V
V
CONDITIONS
MIN.
MAX.
UNIT
1997 May 29
2
PHILIPS [ NXP SEMICONDUCTORS ]
