2.6.3
Looking for a leader in SiGe:C? You just found us!
NXP QUBiC4 process technology
NXP's innovative, high-performance SiGe:C QUBiC4 process lets customers implement more functions into
less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing
advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from
GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance,
linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power.
QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance
upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high-
volume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very
low ppm in the field.
There are three QUBiC4 variants, each with its own
benefits for specific application areas
QUBiC4+
The QUBiC4+ BiCMOS process features 0.25 μm CMOS with
5 metal layers for integration of dense digital logic-based
smart functionality, a rich set of active and passive devices for
high-frequency mixed-signal designs, including thick top metal
layers for high-quality inductors. The device set includes
35 GHz f
T
NPNs with 3.8 V breakdown voltage (BVce0) and low
noise figure (NF < 1.1 dB @ 2 GHz), 5 GHz f
T
VPNPs, a 28 GHz
high-voltage NPN with 5.9 V breakdown voltage, differential
and single-ended varicaps with Q-factor > 30, scalable
inductors with Q-factor > 20, 800 MHz FT lateral PNPs,
0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and
active resistors, a 270 ohm/sq. SiCr thin film resistor,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor,
1 to 6 fF/μm2 oxide capacitors and various other devices
including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS
transistors capacitor. The QUBiC4+ process is silicon-based
and ideal for applications up to 5 GHz (f
T
= 35 GHz,
NF < 1.1 dB @ 2 GHz), as well as for medium power amplifiers
up to 33 dBm.
QUBiC4X
The QUBiC4X BiCMOS process is a SiGe:C-based extension
of the QUBiC process for high-frequency mixed-signal designs
and offers a rich set of devices, including a 110 GHz f
T
NPN with
2.0 V breakdown voltage and very low noise figure (NF < 1.0 dB @
10 GHz), 0.25 μm CMOS, a variety of resistors, a 5.7 fF/μm2 oxide
capacitor, and a 5 fF/μm2 MIM capacitor.
The QUBiC4X is ideal for applications that typically operate at
up to 30 GHz (f
T
= 110 GHz , NF < 1.0 dB @ 10 GHz) and ultra-
low noise applications such as LNAs and mixers.
QUBiC4Xi
The QUBiC4Xi BiCMOS process further enhances the QUBiC4X
process and offers an additional feature set of devices for high-
frequency mixed-signal designs. These include 180 GHz f
T
NPNs with 1.4 V breakdown voltage and ultra-low noise figure
(NF < 0.7 dB @ 10 GHz), 0.25 μm CMOS, several resistors,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor.
QUBiC4Xi represents the newest SiGe:C process, with
improved f
T
(> 200 GHz) and even lower noise figure
(NF < 0.6 dB @ 10 GHz). It is ideal for applications beyond
30 GHz, such as LO generators.
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NXP Semiconductors RF Manual 16
th
edition
PHILIPS [ NXP SEMICONDUCTORS ]
