Philips Semiconductors
Product specification
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
continuous forward voltage
see Fig.2;
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
I
R
C
d
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT490 (SC-89) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
continuous reverse current
diode capacitance
V
R
= 50 V; see Fig.3; note 1
V
R
= 70 V; see Fig.3; note 1
V
R
= 0; f = 1 MHz; see Fig.4
PARAMETER
CONDITIONS
1PS89SB74
MAX.
UNIT
410
750
1
100
10
2
mV
mV
V
nA
µA
pF
VALUE
500
UNIT
K/W
2001 Apr 20
3
PHILIPS [ NXP SEMICONDUCTORS ]
