Philips Semiconductors
Product specification
Schottky barrier triple diode
FEATURES
•
Low forward voltage
•
Low diode capacitance
•
Three independent diodes in a small SMD plastic
package.
APPLICATIONS
•
UHF mixers
•
Sampling circuits
•
Modulators
•
Phase detectors.
DESCRIPTION
Three internal (galvanic) isolated silicon epitaxial Schottky
barrier diodes in a SOT363 (SC-88) small SMD plastic
package. ESD sensitive device, observe handling
precautions.
6
5
4
handbook, halfpage
1PS88SB82
PINNING
PIN
1
2
3
4
5
6
anode (a1)
anode (a2)
anode (a3)
cathode (k3)
cathode (k2)
cathode (k1)
DESCRIPTION
1
2
3
6
1
Top view
2
3
MSA370
5
4
MGU324
Marking code:
E1.
Fig.1
Simplified outline (SOT363; SC-88)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward voltage
storage temperature
junction temperature
operating ambient temperature
−
−
−65
−
−65
15
30
+150
125
+150
V
mA
°C
°C
°C
PARAMETER
MIN.
MAX.
UNIT
2001 Feb 16
2
PHILIPS [ NXP SEMICONDUCTORS ]
