NXP Semiconductors
BAS40 series; 1PSxxSB4x series
General-purpose Schottky diodes
10
2
I
F
(mA)
mlc361
10
3
I
R
(μA)
(1)
mlc362
10
2
10
10
(1)
(2)
(3)
(4)
(2)
1
1
10
−1
10
−1
(3)
10
−2
0
0.2
0.4
0.6
0.8
V
F
(V)
1
10
−2
0
10
20
30
VR (V)
40
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
mlc364
Fig 2.
Reverse current as a function of reverse
voltage; typical values
mlc363
10
3
r
dif
(Ω)
10
2
5
C
d
(pF)
4
3
2
10
1
1
10
−1
1
10
I
F
(mA)
10
2
0
0
10
20
30
VR (V)
40
f = 10 kHz
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Differential resistance as a function of forward
current; typical values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
BAS40_1PSXXSB4X_SER_8
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 08 — 13 January 2010
8 of 21
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