Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB10
FEATURES
DESCRIPTION
• Low forward voltage
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
• Guard ring protected
• Very small plastic SMD package.
APPLICATIONS
handbook, 4 columns
k
a
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
MAM283
Marking code: S0.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
CONDITIONS
MIN.
MAX.
30
UNIT
VR
IF
V
−
−
−
−
200
mA
mA
mA
°C
IFRM
IFSM
Tstg
Tj
tp ≤ 1 s; δ ≤ 0.5
tp < 10 ms
300
600
+150
125
−65
−
junction temperature
°C
Tamb
operating ambient temperature
+125
°C
−65
1996 Oct 14
2
NXP [ NXP ]
