Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Low forward voltage
•
Guard ring protected
•
Very small plastic SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes.
Marking code:
S0.
The marking bar indicates the cathode.
MAM283
1PS76SB10
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
handbook, 4 columns
k
a
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
CONDITIONS
−
−
−
−
−65
−
−65
MIN.
MAX.
30
200
300
600
+150
125
+125
V
mA
mA
mA
°C
°C
°C
UNIT
1996 Oct 14
2
PHILIPS [ NXP SEMICONDUCTORS ]
