Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
CONDITIONS
see Fig.2; note 1
I
F
= 0.1 A
I
F
= 1 A
I
R
C
d
Note
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-74 (SOT457) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
continuous reverse current
diode capacitance
V
R
= 10 V; note 1; see Fig.3
V
R
= 40 V; note 1; see Fig.3
V
R
= 4 V; f = 1 MHz; see Fig.4
280
460
15
60
65
1PS74SB43
TYP.
MAX.
330
500
40
300
80
UNIT
mV
mV
µA
µA
pF
VALUE
200
UNIT
K/W
1999 Dec 10
3
PHILIPS [ NXP SEMICONDUCTORS ]
