Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
T
amb
< 25
°C
PARAMETER
CONDITIONS
−
−
−
−
−
MIN.
MAX.
UNIT
30
200
300
600
200
+150
125
+125
V
mA
mA
mA
mW
°C
°C
°C
−65
−
−65
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
continuous forward voltage
see Fig.6
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 (SC70) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
625
UNIT
K/W
continuous reverse current
diode capacitance
V
R
= 25 V; note 1; see Fig.7
V
R
= 1 V; f = 1 MHz; see Fig.8
240
320
400
500
800
2
10
mV
mV
mV
mV
mV
µA
pF
PARAMETER
CONDITIONS
MAX.
UNIT
1999 Apr 26
3
PHILIPS [ NXP SEMICONDUCTORS ]
