1PS66SB62; 1PS76SB62
40 V, 20 mA low C
d
Schottky barrier diodes
Rev. 03 — 24 November 2004
Product data sheet
1. Product profile
1.1 General description
Planar low capacitance Schottky barrier diodes with an integrated guard ring for stress
protection, encapsulated in very small SMD plastic packages.
Table 1:
Product overview
Package
Philips
1PS66SB62
1PS76SB62
SOT666
SOD323
JEITA
-
SC-76
triple isolated diode
single diode
Configuration
Type number
1.2 Features
s
Very low diode capacitance
s
Low forward voltage
s
Very small SMD plastic packages.
1.3 Applications
s
Digital applications:
x
Ultra high-speed switching
x
Clamping circuits.
s
RF applications:
x
Diode ring mixer
x
RF detector
x
RF voltage doubler.
1.4 Quick reference data
Table 2:
Symbol
I
F
V
R
C
d
Quick reference data
Parameter
forward current
reverse voltage
diode capacitance
V
R
= 0 V; f = 1 MHz
Conditions
Min
-
-
-
Typ
-
-
-
Max
20
40
0.6
Unit
mA
V
pF
PHILIPS [ NXP SEMICONDUCTORS ]
