Philips Semiconductors
Product specification
High-speed double diode
GRAPHICAL DATA
MBG444
1PS301
handbook, halfpage
300
handbook, halfpage
300
MBG382
IF
(mA)
200
(1)
IF
(mA)
(1)
(2)
(3)
200
(2)
100
100
0
0
100
Tamb
(
o
C)
200
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, halfpage
IR
(µA)
10
MBG380
handbook, halfpage
0.8
MBG446
Cd
(pF)
0.6
1
(1)
(2)
(3)
0.4
10
1
0.2
10
2
0
100
Tj (
o
C)
200
0
0
4
8
12
VR (V)
16
(1) V
R
= 80 V; maximum values.
(2) V
R
= 80 V; typical values.
(3) V
R
= 25 V; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.4
Reverse current as a function of junction
temperature.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1999 May 06
4
PHILIPS [ NXP SEMICONDUCTORS ]
