Philips Semiconductors
Product specification
High-speed double diode
GRAPHICAL DATA
1PS181
300
IF
(mA)
200
MBD033
handbook, halfpage
300
MBG382
IF
(mA)
(1)
(2)
(3)
single diode loaded
200
double diode loaded
100
100
0
0
100
T amb ( C)
o
0
200
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of
forward voltage.
10
2
handbook, halfpage
IR
(µA)
10
MBG380
handbook, halfpage
2.5
Cd
(pF)
2.0
MBH191
1.5
1
(1)
(2)
(3)
1.0
1
10
0.5
10
2
0
100
Tj (
o
C)
200
0
0
5
10
15
20
VR (V)
25
(1) V
R
= 80 V; maximum values.
(2) V
R
= 80 V; typical values.
(3) V
R
= 25 V; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.4
Reverse current as a function of
junction temperature.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
4
PHILIPS [ NXP SEMICONDUCTORS ]
