NXP Semiconductors
Product data sheet
High-speed double diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 80 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 500 mA.
2
1
1PS181
PINNING
PIN
1
2
3
DESCRIPTION
cathode (k1)
cathode (k2)
common anode
DESCRIPTION
The 1PS181 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small plastic SMD SC59 package.
APPLICATIONS
•
High-speed switching in e.g.
surface mounted circuits.
3
Top view
MAM082
2
1
3
Marking code:
A3T.
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge
t = 1
μs
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−65
−
4
0.5
250
+150
150
A
A
mW
°C
°C
−
−
−
−
−
85
80
215
125
500
V
V
mA
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 03
2
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