Philips Semiconductors
Product specification
Voltage reference diodes
GRAPHICAL DATA
MBG534
1N821 to 1N829
1N821A to 1N829A
handbook, halfpage
10
(2)
(3)
(1)
handbook, halfpage
IZ
(mA)
7.5
0.002
∆S
Z
(%/K)
0.001
MBG536
0
−0.001
5
(1)
(2)
(3)
−0.002
2.5
-75
-50
-25
0
∆V
ref(max) (mV)
25
50
−0.003
4
5
6
7
8
9
10
IZ (mA)
11
Referenced to I
Z
= 7.5 mA.
(1) T
j
= 100
°C.
(2) T
j
= 25
°C.
(3) T
j
=
−55 °C.
Fig.2
Working current as a function of the
maximum reference voltage excursion.
Fig.3
Temperature coefficient change as a
function of working current; typical values.
10
3
handbook, halfpage
rdif
(Ω)
10
2
MBG535
10
(1)
(2)
(3)
1
1
10
IZ (mA)
10
2
(1) T
j
= 100
°C.
(2) T
j
= 25
°C.
(3) T
j
=
−55 °C.
Fig.4
Differential resistance as a function of
working current; typical values.
1996 Mar 20
4
PHILIPS [ NXP SEMICONDUCTORS ]
