1N5818 参数 Datasheet PDF下载

Philips Semiconductors

Product specification

Schottky barrier diodes

1N5817; 1N5818; 1N5819

1

a=3

PF(AV)

(W)

2.5

2 1.57

1.42

1

MBE641

0.5

0

0

0.5

1

1.5

IF(AV) (A)

2

Fig.4

1N5818. Maximum values steady state forward power dissipation as a function of the average forward

current; a = I

F(RMS)

/I

F(AV).

1

a=3

PF(AV)

(W)

2.5

2 1.57

1.42

1

MBE643

0.5

0

0

0.5

1

1.5

IF(AV) (A)

2

Fig.5

1N5819. Maximum values steady state forward power dissipation as a function of the average forward

current; a = I

F(RMS)

/I

F(AV).

6

1996 May 03