Philips Semiconductors
Product specification
Voltage regulator diodes
1N5225B to 1N5267B
FEATURES
DESCRIPTION
• Total power dissipation:
max. 500 mW
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
• Tolerance series: ±5%
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
• Working voltage range:
nom. 3.0 to 75 V
• Non-repetitive peak reverse power
dissipation: max. 40 W.
handbook, halfpage
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a
MAM239
APPLICATIONS
• Low-power voltage stabilizers or
voltage references.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
mA
IF
continuous forward current
non-repetitive peak reverse current
−
250
IZSM
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 50 °C; lead length max.;
−
400
mW
note 1
Lead length 8 mm; note 2
−
−
500
40
mW
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
tp = 8.3 ms; square wave;
−
10
W
Tj ≤ 55 °C prior to surge
Tstg
Tj
storage temperature
junction temperature
−65
−65
+200
+200
°C
°C
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature ≤ 75 °C.
ELECTRICAL CHARACTERISTICS
Table 1
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 200 mA; see Fig.4
MAX.
UNIT
VF
1.1
V
1996 Apr 26
2
NXP [ NXP ]
