1996 Apr 26
4
Philips Semiconductors
TYPE No.
WORKING DIFFERENTIAL
VOLTAGE RESISTANCE
V
Z
(V)
(1)
r
dif
(Ω)
at I
Ztest
at I
Ztest
NOM.
MAX.
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
TEMP. COEFF.
S
Z
(%/K)
at I
Z
(2)
DIODE CAP.
TEST
C
d
(pF)
CURRENT
I
Ztest
(mA) at f = 1 MHz;
at V
R
= 0 V
MAX.
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
60
55
55
50
50
50
45
45
45
40
40
40
40
40
35
35
35
REVERSE CURRENT
at REVERSE
VOLTAGE
I
R
(µA)
MAX.
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
17.0
18.0
19.0
21.0
21.0
23.0
25.0
27.0
30.0
33.0
36.0
39.0
43.0
46.0
47.0
52.0
56.0
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
t
p
= 100
µs;
T
amb
= 25
°C
MAX.
1.25
1.25
1.25
1.0
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.3
0.25
0.2
Voltage regulator diodes
MAX.
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
+0.097
+0.097
+0.098
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
Notes
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
1N5225B to 1N5267B
1. V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°C.
2. For types 1N5225B to 1N5242B the I
Z
current is 7.5 mA; for 1N5243B and higher I
Z
= I
Ztest
. S
Z
values valid between 25
°C
and 125
°C.
Product specification
PHILIPS [ NXP SEMICONDUCTORS ]
