Philips Semiconductors
Product specification
Voltage regulator diodes
GRAPHICAL DATA
1N5225B to 1N5267B
10
3
handbook, full pagewidth
Rth j-a
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
MBG930
10
2
10
0.02
0.01
≤0.001
tp
T
tp
T
δ
=
1
10
−1
1
10
10
2
10
3
10
4
tp (ms)
10
5
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
handbook, halfpage
10
3
MBG801
MBG803
handbook, halfpage
250
PZSM
(W)
10
2
IF
(mA)
125
(1)
10
(2)
1
10
−1
1
duration (ms)
10
0
0.5
0.75
VF (V)
1.0
(1) T
j
= 25
°C
(prior to surge).
(2) T
j
= 150
°C
(prior to surge).
T
j
= 25
°C.
Fig.3
Maximum permissible non-repetitive
peak reverse power dissipation
versus duration.
Fig.4
Forward current as a function of forward
voltage; typical values.
1996 Apr 26
6
PHILIPS [ NXP SEMICONDUCTORS ]
