Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 500 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 3.0 to 75 V
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
handbook, halfpage
1N5225B to 1N5267B
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
k
a
MAM239
APPLICATIONS
•
Low-power voltage stabilizers or
voltage references.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 50
°C;
lead length max.;
note 1
Lead length 8 mm; note 2
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.3
t
p
= 8.3 ms; square wave;
T
j
≤
55
°C
prior to surge
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature
≤
75
°C.
ELECTRICAL CHARACTERISTICS
Table 1
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 200 mA; see Fig.4
MAX.
1.1
UNIT
V
storage temperature
junction temperature
CONDITIONS
MIN.
−
MAX.
250
UNIT
mA
see Table
“Per type”
−
−
−
−
−65
−65
400
500
40
10
+200
+200
mW
mW
W
W
°C
°C
1996 Apr 26
2
PHILIPS [ NXP SEMICONDUCTORS ]
