Philips Semiconductors
Product specification
Controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
I
R
t
rr
C
d
reverse current
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.7
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
CONDITIONS
I
F
= 1 A; T
j
= T
j max
; see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
225
450
650
900
−
−
−
−
MIN.
−
−
TYP.
−
−
MAX.
0.8
1.0
UNIT
V
V
−
−
−
−
−
−
3
50
−
−
−
−
1
150
−
−
V
V
V
V
µA
µA
µs
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1996 Jun 19
3
PHILIPS [ NXP SEMICONDUCTORS ]
