Philips Semiconductors
Product specification
High-speed diodes
FEATURES
•
Hermetically sealed leaded glass
SOD27 (DO-35) package
•
High switching speed: max. 4 ns
•
General application
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 450 mA.
The diodes are type branded.
handbook, halfpage
k
1N4148; 1N4448
DESCRIPTION
The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages.
a
MAM246
APPLICATIONS
•
High-speed switching.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
500
+200
200
A
A
A
mW
°C
°C
see Fig.2; note 1
CONDITIONS
−
−
−
−
MIN.
MAX.
75
75
200
450
V
V
mA
mA
UNIT
1999 May 25
2
PHILIPS [ NXP SEMICONDUCTORS ]
