NXP Semiconductors
Product data sheet
High-speed diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
1N4148
1N4448
I
R
I
R
C
d
t
rr
reverse current
reverse current; 1N4448
diode capacitance
reverse recovery time
PARAMETER
forward voltage
see Fig.3
I
F
= 10 mA
I
F
= 5 mA
I
F
= 100 mA
V
R
= 20 V; see Fig.5
V
R
= 20 V; T
j
= 150
°C;
see Fig.5
V
R
= 20 V; T
j
= 100
°C;
see Fig.5
f = 1 MHz; V
R
= 0 V; see Fig.6
−
−
−
−
CONDITIONS
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
see Fig.2; note 1
CONDITIONS
−
−
−
−
1N4148; 1N4448
MIN.
MAX.
100
100
200
450
V
V
UNIT
mA
mA
4
1
0.5
500
+200
200
A
A
A
mW
°C
°C
−65
−
MIN.
1
MAX.
V
V
V
UNIT
0.62
−
0.72
1
25
50
3
4
4
nA
µA
µA
pF
ns
when switched from I
F
= 10 mA to
−
I
R
= 60 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 50 mA;
t
r
=
20 ns; see Fig.8
−
V
fr
forward recovery voltage
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-tp)
R
th(j-a)
Note
1. Device mounted on a printed-circuit board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
350
UNIT
K/W
K/W
2004 Aug 10
3
PHILIPS [ NXP SEMICONDUCTORS ]
