Philips Semiconductors
Product specification
NPN general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
2PC1815
2PC1815Y
2PC1815GR
2PC1815BL
V
CEsat
V
BEsat
C
c
f
T
F
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 10 mA
base-emitter saturation voltage
collector capacitance
transition frequency
noise figure
I
C
= 100 mA; I
B
= 10 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 200
µA;
V
CE
= 5 V;
R
S
= 2 k
Ω;
f = 1 kHz
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
C
= 0; V
EB
= 5 V
I
C
= 150 mA; V
CE
= 6 V
I
C
= 2 mA; V
CE
= 6 V
120
120
200
350
−
−
−
−
−
−
−
−
−
−
2.5
−
−
MIN.
−
−
25
TYP.
−
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
250
2PC1815
UNIT
K/W
MAX.
100
100
−
700
240
400
700
300
1.1
3.5
−
10
UNIT
nA
nA
mV
V
pF
MHz
dB
I
C
= 1 mA; V
CE
= 6 V; f = 100 MHz 80
1999 May 28
3
PHILIPS [ NXP SEMICONDUCTORS ]
